BUDF Transistor Datasheet pdf, BUDF Equivalent. Parameters and Characteristics. BUDF High Voltage Fast-switching NPN Power Transistor. SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Emitt er-Base Voltage I. Continental Device India Limited. Base Emitter Saturation Voltage. It is recommended that you completely review bu508df datasheet Data Sheet s so as to confirm that the Device s meet functionality parameters for your application. Base Emitter Saturation Voltage. Collector Emitter Bu508df datasheet Voltage. The product information and the bu508df datasheet guides facilitate selection of the CDIL’s Discrete Semiconductor Device s best suited for application in your product s as per your requirement.

No license is granted by implication bu508df datasheet bu508xf under any patent or patent rights of STMicroelectronics. Collector Emitter Sustaining Voltage. Emitt er Cut-off Current I. Collector Cut off Current. Search field Part name Part description. Total Power Dissipation upto T. Information furnished is believed to be accurate and reliable.


Collect or Cut-off Current V.

All bu508df datasheet in mm. Collect or Peak Current t. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of bu508df datasheet parties which may result from its use.

Switching Time Inductive Load see figure 1. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Safe Operating Bu508df datasheet TO Base-Emitt er Saturat ion Voltage.

BUDF datasheet, Pinout ,application circuits BUDF Silicon Diffused Power Transistor

Collect or-Emitter Saturat ion Voltage. Specification mentioned in this publication are bu508df datasheet to change without notice.

STMicroelectronics products are not authorized for use as critical compone nts datashwet life support devices or systems without express written approval of STMicroelectronics. CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior bu508df datasheet.

Switching Time Inductive Load.

Collect or-Emitt er Voltage V. Collector Emitter Saturation Voltage. Collect or-Emitter Sustaining Voltage.


NXP BU508DF NPN High Voltage Bipolar Transistor, 8 A, 700 V, 3-Pin TO-247F

C unless otherwise specified. Collect or-Emitt er Voltage I. Switching Time Percentance vs. Transit ion F requency. This publication supersedes and replaces all information previously supplied. CDIL is a registered Trademark of.

Furthermore, CDIL does not assume bu508df datasheet whatsoever, arising out of the application bu508df datasheet use of any Bu508df datasheet product; neither does it convey any license under its patent rights nor rights of others. Total Dissipation at T. Max Operating Junction Temperature. Inductive Load Switching Test Circuit.

Diode Forward Volt age. Test Cond ition s.